Structural and compositional analyses of a strained AIGaN/GaN superlattice

Journal of Applied Physics

Volumn 100, Issue 1, 2006, Pages

  Shiojiri, M ^a,b,f   Ceh M ^c   Sturm S ^c   Chuo, C C ^d   Hsu, J T ^d   Yang, J R ^e   Saijo, H ^a,g  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b KANAZAWA MEDICAL UNIVERSITY   (Japan)

^c JO EF STEFAN INSTITUTE   (Slovenia)

^d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^e NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^f Kyoto Institute of Technology ^*  (Japan)

^g KINKI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; IMAGE PROCESSING; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR LASERS;

BRIGHT BANDS; SAPPHIRE SUBSTRATES; SCANNING-TRANSMISSION ELECTRON MICROSCOPE (STEM); STRAINED-LAYER SUPERLATTICE (SLS);

SUPERLATTICES;

EID: 33746216158     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2213084     Document Type: Article

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