Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer

IEEE Electron Device Letters

Volumn 24, Issue 4, 2003, Pages 206-208

  Tu, Ru Chin ^a   Tun, Chun Ju ^b   Sheu, J K ^b   Kuo, Wei Hong ^a   Wang, Te Chung ^a   Tsai, Ching En ^a   Hsu, Jung Tsung ^a   Chi, Jim ^a   Chi, Gou Chung ^b  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

GaN; InGaN; Laser diodes; Lasing duration; Short period superlattices; Tunneling junction

Indexed keywords

ELECTRIC CURRENTS; GALLIUM NITRIDE; LASER PULSES; METALLORGANIC VAPOR PHASE EPITAXY; OHMIC CONTACTS; PLATINUM; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES; TUNNEL JUNCTIONS;

LASING DURATION; SEMICONDUCTING INDIUM GALLIUM NITRIDE; SHORT PERIOD SUPERLATTICES; TUNNELING CONTACT LAYER;

SEMICONDUCTOR LASERS;

EID: 0038781412     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.810889     Document Type: Letter

References (5)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate," Appl. Phys. Lett., vol. 72, pp. 211-223, 1998.
2. T. A. Richard, E. I. Chen, A. R. Sugg, G. E. Höfler, and N. Holonyak Jr., "High current density carbon-doped strained-layer GaAs(p+)-InGaAs(n+)-GaAs(n+) p-n tunnel diodes," Appl. Phys. Lett., vol. 63, pp. 3613-3615, 1993.
3. S. R. Jeon, Y. H. Song, H. J. Jang, G. M. Yang, S. W. Hwang, and S. J. Son, "Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions," Appl. Phys. Lett, vol. 78, pp. 3265-3267, 2001.
4. 0.7N/GaN short-period superlattice tunneling contact layer," IEEE Electron Device Lett., vol. 22, pp. 460-462, Oct. 2001.
5. H. Ishikawa, S. Kobayashi, Y. Koide, S. Yamasaki, S. Nagai, J. Umezaki, M. Koike, and M. Murakami, "Effects of treatments and metal work functions on electrical properties at p-GaN/metal interfaces," J. Appl. Phys., vol. 81, pp. 1315-1322, 1997.