High performance InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors

Solid-State Electronics

Volumn 50, Issue 6, 2006, Pages 902-907

  Cho, S W ^a   Yun, J H ^a   Jun, D H ^a   Song, J I ^a   Adesida, I ^b   Pan, N ^c   Jang, J H ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b University of Illinois at Urbana Champaign   (United States)

^c MicroLink Devices Inc   (United States)

Author keywords

Compound semiconductor; GaAsSb; Heterojunction bipolar transistors; InAlAs; Spacer layer

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TUNNELING; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICES; THIN FILMS;

COMPOUND SEMICONDUCTORS; GAASSB; INALAS; SPACER LAYERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33745753230     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.04.015     Document Type: Article

References (19)

1. CEO ≥ 6 V. IEEE Electron Dev Lett 22 (2001) 361-363
2. Jang J.H., Cho H.K., Bae J.W., Pan N., and Adesida I. Low-resistance Pd/Ir/Au ohmic contacts on p-GaAsSb. Electron Lett 40 (2004) 1550-1551
3. Tao N., Liu H.G., and Bolognesi C.R. Surface recombination currents in type-II NpN InP-GaAsSb-InP self-aligned DHBTs. IEEE Trans Electron Dev 52 (2005) 1061-1066
4. Bolognesi C.R., Liu H.G., Tao N., Zhang X., Bagheri-Najimi S., and Watkins S.P. Neutral base recombination in InP/GaAsSb/InP double-heterostructure bipolar transistors: Suppression of Auger recombination in p+ GaAsSb base layers. Appl Phys Lett 86 (2005) 253506
5. Oda Y., Yokoyama H., Kurishima K., Kobayashi T., Watanabe N., and Uchida M. Improvement of current gain of C-doped GaAsSb-base heterojunction bipolar transistors by using an InAlP emitter. Appl Phys Lett 87 (2005) 023503
6. Yi S.S., Chamberlin D.R., Girolami G., Juanitas M., Bour D., Moll N., et al. Growth and properties of GaAsSb/InP and GaAsSb/InAlAs superlattices on InP. J Cryst Growth 248 (2003) 284-288
7. Zhu X., Pavlidis D., and Zhao G. First high-frequency and power demonstration of InGaAlAs/GaAsSb/InP double HBTs. Int Conf on Indium Phosphide Related Materials (2003) 149-152
8. Zhu H.J., Kuo J.M., Pinsukanjana P., Jin X.J., Vargason K., Herrera M., et al. GaAsSb-based HBTs grown by production MBE system. Int Conf Indium Phosphide Related Materials (2004) 338-341
9. Bolognesi C.R., Matine N., Dvorak M.W., Xu X.G., Hu J., and Watkins S.P. Non-Blocking collector InP/GaAsSb/InP double heterojunction bipolar transistors with a staggered lineup base-collector junction. IEEE Electron Dev Lett 20 (1999) 155-157
10. Liu H.G., Wu J.Q., Tao N., Firth A.V., Griswold E.M., MacElwee T.W., et al. High performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100 mm InP substrates using PH3 and AsH3. J Cryst Growth 267 (2004) 592-597
11. Yamanaka K., Nartsuka S., Kanamoto K., Mihara M., and Ishii M. Electron traps in AlGaAs grown by molecular-beam epitaxy. J Appl Phys 161 (1987) 5062-5069
12. Costa D., and Harris J.S. Low-frequency noise properties of n-p-n AlGaAs/GaAs heterojunction bipolar transistors. IEEE Trans Electron Dev 39 10 (1992) 2383-2394
13. Tadayon S., Metze G., Cornfeld A., Pande K., Huang H., and Tadayon B. Application of micro-airbridge isolation in high speed HBT fabrication. Electron Lett 29 1 (1993) 26-27
14. Song J.I., Palmstrom C.J., Van der Gaag B.P., Hong W.P., Hayes J.R., and Chough K.B. High-performance InP/InGaAs heterojunction bipolar transistors with highly carbon-doped base grown by chemical beam epitaxy. Electron Lett 29 (1993) 666-667
15. Yan B.P., Hsu C.C., Wang X.Q., and Yang E.S. Current transport mechanism in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors. Appl Phys Lett 85 17 (2004) 3884-3886
16. Liu W., Fan S.K., Kim T.S., Beam III E.A., and Davito D.B. Current transport mechanism in GaInP/GaAs heterojunction bipolar transistors. IEEE Trans Electron Dev 40 (1993) 1378-1383
17. Chand N., Fischer R., and Morkoc H. Collector-emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistors. Appl Phys Lett 47 (1985) 313-315
18. Hong W.P., Song J.I., Bhat R., Chough K.B., Hayes J.R., Sugeng B., et al. Microwave power InP/InGaAs/InP double-heterojunction bipolar transistors. Int Conf Indium Phosphide Related Materials (1993) 21-24
19. T) fall off at high current densities. IRE Trans Electron Dev 9 (1962) 164-174