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Volumn 87, Issue 2, 2005, Pages

Improvement of current gain of C-doped GaAsSb-base heterojunction bipolar transistors by using an InAlP emitter

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION REGIONS; RECOMBINATION CURRENT; RECOMBINATION PROCESS;

EID: 24144447366     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1995948     Document Type: Article
Times cited : (30)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.