Low-resistance Pd/Ir/Au ohmic contacts on p-GaAsSb

Electronics Letters

Volumn 40, Issue 24, 2004, Pages 1550-1551

  Jang, J H ^a,c   Cho, H K ^a   Bae, J W ^a   Pan, N ^b   Adesida, I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b MicroLink Devices Inc   (United States)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; GOLD; HETEROJUNCTION BIPOLAR TRANSISTORS; IRIDIUM; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MULTILAYERS; PALLADIUM; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBTS); ELECTRICAL CHARACTERISTICS; GALLIUM ARSENIDE ANTIMONIDE (GAASSB);

OHMIC CONTACTS;

EID: 10944253042     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20046658     Document Type: Article

References (9)

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