First high-frequency and power demonstration of InGaAlAs/GaAsSb/InP double HBTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 149-152

  Zhu, Xin ^a   Pavlidis, Dimitris ^a   Zhao, Guangyuan ^a   Bove, P ^b   Lahreche, H ^b   Langer, R ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b PICOGIGA ^*  (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRIC POWER MEASUREMENT; ELECTRONS; MICROWAVES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRON EMISSION; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; HETEROJUNCTIONS; INDIUM; INDIUM PHOSPHIDE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; THERMAL CONDUCTIVITY; X RAY SCATTERING;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; EMITTER BASE JUNCTION DESIGN; MICROMETER EMITTER SIZE; SEMICONDUCTING GALLIUM ALUMINUM ARSENIDE; SEMICONDUCTING GALLIUM ARSENIDE ANTIMONIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

BAND DISCONTINUITIES; BASE-COLLECTOR JUNCTIONS; COLLECTOR CURRENTS; DESIGN ENGINEERING; HIGH CURRENT DENSITIES; INDIUM GALLIUM ARSENIDE; POWER ENGINEERING AND ENERGIES; POWER PERFORMANCE;

EID: 0038487269     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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