Neutral base recombination in InP/GaAsSb/InP double-heterostructure bipolar transistors: Suppression of Auger recombination in p+ GaAsSb base layers

Applied Physics Letters

Volumn 86, Issue 25, 2005, Pages 1-3

  Bolognesi, C R ^a   Liu, H G ^a   Tao, N ^a   Zhang, X ^a   Bagheri Najimi, S ^a   Watkins, S P ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); DOPING (ADDITIVES); HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; TENSILE STRENGTH;

DOPING LEVELS; DOUBLE-HETEROJUNCTION BIPOLAR TRANSISTORS (DHBT); GAIN VARIATIONS; NEUTRAL BASE RECOMBINATION;

BIPOLAR TRANSISTORS;

EID: 24344445553     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1949290     Document Type: Article

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