GaAsSb-based HBTS grown by production MBE system

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 338-341

  Zhu, H J ^a   Kuo, J M ^a   Pinsukanjana, P ^a   Jin, X J ^a   Vargason, K ^a   Herrera, M ^a   Ontiveros, D ^a   Boehme, C ^a   Kao, Y C ^a  

^a Intelligent Epitaxy Technology Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CARBON; ELECTRIC CURRENTS; GROWTH KINETICS; HETEROJUNCTIONS; HOLE MOBILITY; MOLECULAR BEAM EPITAXY; MONITORING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

ABSORPTION BAND EDGE SPECTROSCOPY (ABES); CONDUCTION BANDS; EFFUSION; MULTI-WAFER SYSTEMS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 23744501164     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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