Surface recombination currents in "type-II" NpN InP-GaAsSb-InP self-aligned DHBTs

IEEE Transactions on Electron Devices

Volumn 52, Issue 6, 2005, Pages 1061-1066

  Tao, Nick G M ^a   Liu, Honggang ^a   Bolognesi, C R ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

Double heterostructure bipolar transistor (DHBT); GaAsSb; GaInAs; InP; Surface recombination

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES;

DOUBLE HETEROSTRUCTURE BIPOLAR TRANSISTOR; SURFACE RECOMBINATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 21044451771     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.848101     Document Type: Article

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