Growth and properties of GaAsSb/InP and GaAsSb/InAlAs superlattices on InP

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 284-288

  Yi, Sung Soo ^a   Chamberlin, D R ^a   Girolami, G ^a   Juanitas, M ^a   Bour, D ^a   Moll, N ^a   Moon, R ^a  

^a AGILENT TECHNOLOGIES   (United States)

Author keywords

A1. Interfaces; A3. Metalorganic vapor phase epitaxy; A3. Superlattices; B1. Antimonides

Indexed keywords

CATHODOLUMINESCENCE; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR SUPERLATTICES; SPECTROSCOPIC ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CATHODOLUMINESCENCE (CL) SPECTROSCOPY;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0037291826     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01872-9     Document Type: Conference Paper

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