Current transport mechanism in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors

Applied Physics Letters

Volumn 85, Issue 17, 2004, Pages 3884-3886

  Yan, B P ^a   Hsu, C C ^a   Wang, X Q ^a   Yang, E S ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; COMPOSITION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ENERGY DISSIPATION; HETEROJUNCTIONS; PHOTOLITHOGRAPHY; TRANSPORT PROPERTIES;

CONTACT RESISTANCE; CURRENT GAIN; CURRENT TRANSPORT MECHANISMS; ENERGY BANDGAP; VALENCE BAND;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 9744282642     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1808891     Document Type: Article

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