High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100 mm InP substrates using PH3 and AsH3

Journal of Crystal Growth

Volumn 267, Issue 3-4, 2004, Pages 592-597

  Liu, H G ^a   Wu, J Q ^a   Tao, N ^a   Firth, A V ^b   Griswold, E M ^b   MacElwee, T W ^b   Bolognesi, C R ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

^b NORTEL NETWORKS   (Canada)

Author keywords

B2. Semiconducting III V materials; B3. Electron device manufacture; B3. Heterostructure bipolar transistors

Indexed keywords

CARBON; ELECTRON DEVICE MANUFACTURE; EXTRAPOLATION; HETEROJUNCTION BIPOLAR TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

BASE COLLECTORS; CURRENT GAIN; EPITAXIAL LAYERS; SEMICONDUCTING III-V MATERIALS;

EPITAXIAL GROWTH;

EID: 2942609025     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.035     Document Type: Article

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