Post thermal annealing crystallization and reactive ion etching of SiC films produced by PECVD

Journal of Non-Crystalline Solids

Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1392-1397

  Oliveira, A R ^a   Carreno M N P ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Amorphous semiconductors; Crystallization; Diffraction and scattering measurements; FTIR measurements; X ray diffraction

Indexed keywords

ANNEALING; CRYSTALLIZATION; DIFFRACTION; OPTIMIZATION; REACTIVE ION ETCHING; SILICON; THERMAL EFFECTS; X RAY DIFFRACTION;

AMORPHOUS SEMICONDUCTORS; FTIR MEASUREMENTS; GAS MIXTURES; SCATTERING MEASUREMENTS;

SUPERCONDUCTING FILMS;

EID: 33745449469     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.01.075     Document Type: Article

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