Etching characteristics and mechanical properties of a-SiC:H thin films

Sensors and Actuators, A: Physical

Volumn 94, Issue 1-2, 2001, Pages 87-94

  Schmid, U ^a   Eickhoff, M ^a   Richter, Ch ^a   Krotz G ^a   Schmitt Landsiedel, D ^b  

^a AIRBUS GROUP INNOVATIONS   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

Amorphous silicon carbide (a SiC:H); Etch rate; Film stress; Harsh environment; Young's modulus

Indexed keywords

ELASTIC MODULI; ENERGY GAP; ETCHING; HOLOGRAPHIC INTERFEROMETRY; MICROMACHINING; MICROSENSORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; STRESS ANALYSIS; SUBSTRATES; THERMAL EFFECTS; YIELD STRESS;

GAS MIXTURES;

THIN FILMS;

EID: 0035980386     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(01)00683-5     Document Type: Article

References (23)

1. Recent developments in SiC single-crystal electronics
2. Progress in silicon carbide semiconductor electronics technology
3. Circular and linear enhancement-mode 6H-SiC MOSFETs for high temperature applications
4. Silicon compatible materials for harsh environments sensors
5. An overview of SiC epitaxial growth
6. Amorphous silicon carbide and its application in silicon micro-machining
7. 2 gas mixtures
8. Accelerated aging of micromachined silicon/silicon carbide diaphragms by the application of pressure and temperature
9. Chemical etching of ion implanted amorphous silicon carbide
10. Properties of silicon carbide
11. 6 magnetoplasma near electron cyclotron resonance conditions
12. Mechanical property measurements of thin films using load-deflection of composite rectangular membranes
13. Variations in Young's modulus and intrinsic stress of LPCVD polysilicon due to high temperature annealing
14. Microfabricated structures for the in situ measurement of residual stress, Young's modulus, and ultimate strain of thin films
15. Characterization of a-SiC:H films produced in a standard plasma enhanced chemical vapor deposition system for X-ray mask application
16. Hardness and Young's modulus of amorphous a-SiC thin films determined by nanoindentation and bulge tests
17. Defect structure of carbon rich a-SiC:H films and the influence of gas and heat treatments
18. Influence of hydrogen on the evolution of structural properties of amorphous silicon carbide
19. Stress modification and characterization of thin SiC films grown by plasma-enhanced chemical vapour deposition
20. Effect of rapid thermal annealing on both the stress and the bonding states of a-SiC:H films
21. Ab initio study of hydrogenation effects in amorphous silicon carbide