Comparative study of heteroepitaxially and homoenitaxially grown 3C-SiC films

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 323-326

  Takahashi, T ^a   Ishida, Y ^a   Tsuchida, H ^b   Kamata, I ^b   Okumura, H ^a   Yoshida, S ^a   Arai, K ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

3C SiC; AFM; Heteroepitaxy; Low pressure CVD; Photoluminescence; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL REACTORS; EPILAYERS; EPITAXIAL FILMS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SILICON CARBIDE; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS; EPITAXIAL GROWTH; EXCITONS; SUBSTRATES; X RAY DIFFRACTION;

LOW-PRESSURE CVD; ROOT MEAN SQUARE; 3C-SIC; COMPARATIVE STUDIES; FREE-EXCITON PEAK; GROWTH PROCESS; HOMOEPITAXIAL GROWTH; LOW PRESSURE CVD; SI (100) SUBSTRATE;

EPITAXIAL GROWTH; SILICON CARBIDE;

EID: 12844273611     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (3)

1. H. Tsuchida et al., Materials Science Forum Vols. 338-342 (2000) pp. 145-148
2. T. Takahashi et al., Materials Science Forum Vols. 264-268 (1998) p p. 207-210
3. W.J. Choyke, Z.C. Feng, J.A. Powell,: J. Appl. Phys. Vol. 64 (6) 15 Sept.(1988), p. 3163-3175