Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 4, 2003, Pages 1415-1421

  Choi, W K ^a   Shi, J ^a   Chor, E F ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ETCHING; HYDROGENATION; INDUCTIVELY COUPLED PLASMA; INFRARED SPECTROSCOPY; ION BOMBARDMENT; POROSITY; SEMICONDUCTING FILMS; SILICON CARBIDE;

ETCH RATE;

AMORPHOUS SILICON;

EID: 0141569854     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1592807     Document Type: Conference Paper

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