Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si

Applied Physics Letters

Volumn 88, Issue 24, 2006, Pages

  Pezzi, R P ^a   Copel, M ^b   Gordon, M ^b   Cartier, E ^b   Baumvol, I J R ^a,c  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c UNIVERSITY OF CAXIAS DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; NUCLEAR REACTION ANALYSIS; OXYGEN TRANSPORT;

ANNEALING; ELECTRIC CONTACTS; ELECTRODES; HAFNIUM COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; RHENIUM; SEMICONDUCTING FILMS; SILICON; TRANSPORT PROPERTIES;

GATES (TRANSISTOR);

EID: 33745214005     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2209720     Document Type: Article

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