Study of X-ray lithographic conditions for SU-8 by Fourier transform infrared spectroscopy

Microelectronic Engineering

Volumn 83, Issue 10, 2006, Pages 1912-1917

  Wong, D ^a   Tan, T L ^a   Lee, P ^a   Rawat, R S ^a   Patran, A ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Chemically amplified resist; FT IR; PEB temperature; SU 8; X ray lithography

Indexed keywords

ABSORPTION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LITHOGRAPHY; PLASMA DEVICES; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SPECTRUM ANALYSIS; SPIN COATING; THERMAL EFFECTS; THICKNESS MEASUREMENT; ASPECT RATIO; CROSSLINKING; MICROELECTROMECHANICAL DEVICES; OPTICAL RESOLVING POWER;

CHEMICALLY-AMPLIFIED RESIST (CAR); DENSE PLASMA FOCUS (DPF); POST-EXPOSURE BAKE (PEB) TEMPERATURES; SOFT X-RAY (SXR) IRRADIATION; CHEMICALLY-AMPLIFIED RESISTS (CAR); DENSE PLASMA FOCUS (DPF) DEVICE;

MICROELECTROMECHANICAL DEVICES; X RAY LITHOGRAPHY;

EID: 33745167696     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.12.012     Document Type: Article

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