Nanomechanical analyses of porous SiO2 low-dielectric-constant films for evaluation of interconnect structure reliability

Microelectronic Engineering

Volumn 83, Issue 10, 2006, Pages 1940-1949

  Chang, Shou Yi ^a   Huang, Yi Chung ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Dielectrics; Mechanical properties; Nanoindentation

Indexed keywords

AGING OF MATERIALS; CRACK INITIATION; CRACK PROPAGATION; ELASTIC MODULI; FRACTURE TOUGHNESS; HARDNESS; PERMITTIVITY; PLASTIC FLOW; PORE SIZE; POROSITY; THIN FILMS; DIELECTRIC MATERIALS; MECHANICAL PROPERTIES; POROUS MATERIALS; SILICON COMPOUNDS; STRESS ANALYSIS;

FRACTURE ENERGY RELEASE RATE; INTERCONNECT STRUCTURE RELIABILITY; NANOINDENTATION; NANOMECHANICAL ANALYSES; ETHANOL MOLAR RATIO;

POROUS MATERIALS; DIELECTRIC FILMS;

EID: 33745130738     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.104     Document Type: Article

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