Negative-bias temperature instability cure by process optimization

IEEE Transactions on Electron Devices

Volumn 53, Issue 6, 2006, Pages 1331-1339

  Scarpa, Andrea ^a   Ward, Derek ^a   Dubois, Jerôme ^a   van Marwijk, Leo ^a   Gausepohl, Steven ^a   Campos, Richard ^a   Sim, Kwang Ye ^b   Cacciato, Antonio ^a   Kho, Ramun ^a   Bolt, Mike ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

^b System on Silicon Manufacturing Co Ptc Ltd (SSMC)   (Singapore)

Author keywords

Device lifetime; MOSFET; Reliability

Indexed keywords

CURING; OPTIMIZATION; PROCESSING; RELIABILITY; TEMPERATURE;

DEVICE LIFETIME; MANUFACTURING PROCESS; NEGATIVE-BIAS TEMPERATURE INSTABILITY (NBTI);

MOSFET DEVICES;

EID: 33744814672     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.873884     Document Type: Article

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