Study of negative-bias temperature-instability-induced defects using first-principle approach

Applied Physics Letters

Volumn 83, Issue 15, 2003, Pages 3063-3065

  Soon, Jia Mei ^a   Loh, Kian Ping ^a   Tan, Shyue Seng ^b   Chen, T P ^b   Teo, W Y ^c   Chan, L ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BOND STRENGTH (CHEMICAL); ENERGY GAP; INTERFACES (MATERIALS); OXYGEN; SILICA;

MOLECULAR ORBITAL;

MOSFET DEVICES;

EID: 0242367507     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1614415     Document Type: Article

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