Process and doping species dependence of negative-bias-temperature instability for P-channel MOSFETs

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn 2002-January, Issue , 2002, Pages 150-153

  Lee, Da Yuan ^a   Lin, Horng Chih ^b   Chiang, Wan Ju ^a   La, Wen Tai ^a   Nuang, G ^b   Huang, Tiao Yuan ^a,b   Wang, Tahui ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Boron; Degradation; Doping; Hydrogen; MOSFETs; Niobium compounds; Plasma devices; Plasma measurements; Titanium compounds; Tunneling

Indexed keywords

BORON; BUDGET CONTROL; DEGRADATION; DOPING (ADDITIVES); ELECTRON TUNNELING; HYDROGEN; MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; NIOBIUM COMPOUNDS; PASSIVATION; PLASMA DEVICES; SEMICONDUCTING SILICON; THERMODYNAMIC STABILITY; TITANIUM COMPOUNDS;

BORON PENETRATION; HYDROGEN PASSIVATION; MOSFETS; NEGATIVE BIAS TEMPERATURE INSTABILITY; P-CHANNEL MOS; PLASMA MEASUREMENT; POLY-SI GATES; THERMAL BUDGET;

INTEGRATED CIRCUITS;

EID: 84948771153     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PPID.2002.1042631     Document Type: Conference Paper

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