Fabrication of rutile TiO2 thin films by low-temperature, bias-assisted cathodic arc deposition and their dielectric properties

Journal of Materials Research

Volumn 21, Issue 4, 2006, Pages 844-850

  Huang, A P ^a   Chu, Paul K ^a   Wang, L ^b   Cheung, W Y ^b   Xu, J B ^b   Wong, S P ^b  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; DIELECTRIC PROPERTIES; ELECTRIC PROPERTIES; LOW TEMPERATURE PROPERTIES; MICROSTRUCTURE; PERMITTIVITY; SEMICONDUCTOR DEVICE MANUFACTURE; THIN FILMS;

ANNEALING TEMPERATURE; CATHODIC ARC DEPOSITION; RUTILE-TYPE TITANIUM DIOXIDE; THERMODYNAMIC INSTABILITY;

TITANIUM DIOXIDE;

EID: 33744490077     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2006.0119     Document Type: Article

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