Characterization of local current leakage in la2O 3-Al2O3 composite films by conductive atomic force microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 2954-2960

  Seko, Akiyoshi ^a   Sago, Toshifumi ^a   Sakashita, Mitsuo ^a   Sakai, Akira ^a   Ogawa, Masaki ^a   Zaima, Shigeaki ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Conductive atomic force microscopy; Gate high k dielectric film; La 2O3 Al2O3 composite film; Local leakage current; Reliability

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITE MATERIALS; DIELECTRIC FILMS; LEAKAGE CURRENTS; PERMITTIVITY; PULSED LASER DEPOSITION;

CONDUCTIVE ATOMIC FORCE MICROSCOPY; GATE HIGH-K DIELECTRIC FILM; LA 2O3-AL2O3 COMPOSITE FILM; LOCAL LEAKAGE CURRENT;

LANTHANUM COMPOUNDS;

EID: 33646931523     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2954     Document Type: Article

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