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Volumn 43, Issue 7 B, 2004, Pages 4683-4686

Behavior of local current leakage in stressed gate SiO2 films analyzed by conductive atomic force microscopy

Author keywords

Conductive atomic force microscopy; Defect sites; Gate dielectric film; SiO2; Trapped hole

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEFECTS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; MOS DEVICES; SILICA; STRESSES; SUBSTRATES; SURFACES;

NEGATIVE VOLTAGE SHIFT; STRESS-INDUCED DEFECTS; SUBSTRATE STRUCTURE;

THIN FILMS;

EID: 5144220582 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.4683 Document Type: Conference Paper

Times cited : (4)

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