Analysis of local breakdown process in stressed gate SiO2 films by conductive atomic force microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 10, 2005, Pages 7582-7587

  Seko, Akiyoshi ^a   Watanabe, Yukihiko ^b   Kondo, Hiroki ^a   Sakai, Akira ^a   Zaima, Shigeaki ^a   Yasuda, Yukio ^c  

^a NAGOYA UNIVERSITY   (Japan)

^b Rd Management Section   (Japan)

^c KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Breakdown; Conductive atomic force microscopy; Gate dielectric film; SiO2; Stress induced defect; Trapped hole

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEGRADATION; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; GATES (TRANSISTOR); HOLE TRAPS; LEAKAGE CURRENTS; MOS CAPACITORS; SILICA;

CONDUCTIVE ATOMIC FORCE MICROSCOPY (C-AFM); SIO2; TRAPPED HOLE;

THIN FILMS;

EID: 31544460957     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.7582     Document Type: Article

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