Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO2 Films Using Conductive Atomic Force Microscopy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 2 A, 2004, Pages

  Watanabe, Yukihiko ^a,b   Seko, Akiyoshi ^b   Kondo, Hiroki ^b   Sakai, Akira ^b   Zaima, Shigeaki ^b   Yasuda, Yukio ^b  

^a Rd Management Section   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Conductive atomic force microscopy; Gate film; Hole; SiO2; Stress induced leakage current

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; LEAKAGE CURRENTS; MOS DEVICES; OXIDATION; PERCOLATION (FLUIDS); SCANNING TUNNELING MICROSCOPY; STRESS ANALYSIS;

CONDUCTIVE ATOMIC FORCE MICROSCOPY; GATE FILM; HOLE; SIO2; STRESS-INDUCED LEAKAGE CURRENT;

SILICA;

EID: 1942508028     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l144     Document Type: Article

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