Material characterization of metal germanide gate electrodes formed by fully germanided gate process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 2925-2932

  Tsuchiya, Yoshinori ^a   Koyama, Masato ^a   Koga, Junji ^a   Nishiyama, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Fully germanided; FUSI; Germanide; HfSiON; High k; Metal gate; Silicide; Work function

Indexed keywords

ELECTRODES; GERMANIUM COMPOUNDS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; PERMITTIVITY; THERMODYNAMIC STABILITY;

GERMANIDE; METAL GATE; SILICIDE; WORK FUNCTION;

GATES (TRANSISTOR);

EID: 33646919541     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2925     Document Type: Article

References (28)

1. J. Kedzierski, D. Boyd, C. Cabrai, Jr., P. Rohsheim, S. Zafar, P. M. Kozlowski, J. A. Ott and M. Ieong: IEEE Trans. Electron Devices 52 (2005) 39.
2. B. Travel, T. Skotnicki, G. Pares, N. Carriere, M. Rioire, F. Leverd, C. Julien, J. Torres and R. Pantel: IEDM Tech. Dig., 2001, p. 825.
3. J. Kedzierski, M. Ieong, T. Kanarsky, Y. Zhang and H.-S. P. Wong: IEEE Trans. Electron Devices 51 (2004) 2115.
4. K. Hosaka, T. Kurahashi, K. Kawamura, T. Aoyama, Y. Mishima, K. Suzuki and S. Sato: Tech. Dig. Symp. VLSI Technology, 2005, p. 66.
5. K. Takahashi, K. Manabe, T. Ikarashi, N. Ikarashi, T. Hase, T. Yoshihara, H. Watanabe, T. Tatsumi and Y. Mochizuki: IEDM Tech. Dig., 2004, p. 91.
6. M. Kadoshima, K. Akiyama, N. Mise, S. Migita, N. Yasuda, K. Iwamoto, H. Fujiwara, K. Tomonaga, M. Ohno, T. Nabatame and A. Toriumi: Ext. Abstr. Solid State Devices and Materials, 2004, p. 466.
7. C. H. Huang, D. S. Yu, A. Chin, C. H. Wu, W. J. Chen, C. Zhu, M. F. Li, B. J. Cho and D. Kwong: IEDM Tech. Dig., 2003, p. 319.
8. V. Fortuna, M. Barthula, J.-L. Perrossier, F. Meyer. V. Demuth. H. P. Strunk and O. Chaix-Pluchery: J. Vac. Sci. Technol. B 16 (1998) 1659.
9. M. Lyakas, M. Beregovsky, M. Kizenbeng and F. Meyer: J. Appl. Phys. 82 (1997) 1716.
10. T. Jarmar, J. Seger, F. Ericson, D. Mangelinck, U. Smith and S.-L. Zhang: J. Appl. Phys. 92 (2002) 7195.
11. Y. Tsuchiya, A. Kinoshita and J. Koga: Ext. Abstr. Solid State Devices and Materials, 2004, p. 184.
12. C. Hobbs, L. Fonseca, A. Knizhnik, V. Dhandapani, S. Samavedam, W. Tayer, J. Grant, L. Dip, D. Triyoso, R. Hegde, D. Gilmer, R. Garcia, D. Roan, M. Lovejoy, R. Rai, E. Hebert, H.-H. Tseng, S. Anderson, B. White and P. Tobin: IEEE Trans. Electron Devices 51 (2004) 971.
13. C. Hobbs, L. Fonseca, A. Knizhnik, V. Dhandapani, S. Samavedam, W. Tayer, J. Grant, L. Dip, D. Triyoso, R. Hegde, D. Gilmer, R. Garcia, D. Roan, M. Lovejoy, R. Rai, E. Hebert, H.-H. Tseng, S. Anderson, B. White and P. Tobin: IEEE Trans. Electron Devices 51 (2004) 978.
14. K. Nakajima, S. Inumiya, A. Kaneko, S. Yamazaki, K. Eguchi and Y. Tsunashima: 2005 MRS Spring Meet. Abstr., G13.3.
15. Y. Yeo, T. J. King and C. Hu: J. Appl. Phys. 92 (2002) 7266.
16. A. R. Miedema, F. R. de Boer and P. F. de Chatel: J. Phys. F 3 (1973) 1558.
17. W. Goedy: Phys. Rev. 24 (1956) 439.
18. J. Y. Spann, R. A. Anderson, T. J. Thornton, G. Harris, S. G. Thomas and C. Tracy: IEEE Electron Device Lett. 26 (2005) 151.
19. S.-L. Hsu, C.-H. Chien, M.-J. Yang, R.-H. Huang, C.-C. Leu and S.-W. Shen: Appl. Phys. Lett. 86 (2005) 251906.
20. K. Maex and M. V. Rossum: Properties of Metal Silicides (INSPEC, London, 1995).
21. J. Westlinder, T. Schram, L. Pantisano, E. Cartier, A. Kerber, G. S. Lujan, J. Olsson and G. Groeseneken: IEEE Electron Device Lett. 24 (2003) 550.
22. J. Lee, H. Zhong, Y. S. Suh, G. Heuss, J. Gurganus, B. Chen and V. Misra: IEDM Tech. Dig., 2002, p. 359.
23. C. S. Kang, H.-J. Cho, Y. H. Kim, R. Choi, K. Onishi, A. Shahriar and J. C. Lee: J. Vac. Sci. Technol. B 21 (2003) 2026.
24. B. Y. Tsui and C.-F. Huang: IEEE Electron Device Lett. 24 (2003) 153.
25. H. Y. Yu, C. Ren, J. F. Kang, Y.-C. Yeo, D. S. H. Chan, M. F. Li and D.-L. Kwong: Ext. Abstr. Solid State Devices and Materials. 2004, p. 712.
26. J. K. Schaeffer, C. Capasso, L. R. C. Fonseca, S. Samavedam, D. C. Gilmer, Y. Liang, S. Kapat, B. Adetutu, H.-H. Tseng, Y. Shiho, A. Demkov, R. Hegde, W. J. Tayler, R. Gregory, J. Jiang, E. Luckowski, M. V. Ratmond, K. Moore, D. Triyoso, D. Roan, B. E. White Jr. and P. J. Tobin: IEDM Tech. Dig., 2004, p. 287.
27. M. S. Joo, B. J. Cho, D. Z. Chi, N. Balasubramanian and D.-L. Kwong: Ext. Abstr. Solid State Devices and Materials, 2004, p. 202.
28. K. Shiraishi, K. Yamada, K. Torii, Y. Akasaka, K. Nakajima, M. Kohno, T. Chikyo, H. Kitajima and T. Arikado: Tech. Dig. Symp. VLSI Technology, 2004, p. 108.