Exploiting anisotropy for in situ measurement of silicon etch rates in KOH solution

Electrochemical and Solid-State Letters

Volumn 9, Issue 7, 2006, Pages

  Philipsen, Harold G G ^a   Smeenk, Niek J ^a   Ligthart, Hans ^a   Kelly, John J ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ETCHING; MASKS; OPTICAL MICROSCOPY; POTASSIUM COMPOUNDS; SUBSTRATES;

ANISOTROPIC ETCHING; ETCH RATES; MEASURING VOLTAMMOGRAMS; V-GROOVES;

SILICON;

EID: 33646879038     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2203237     Document Type: Article

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