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Journal of Micromechanics and Microengineering

Volumn 11, Issue 5, 2001, Pages 499-503

Influence of the angle between etched (near) Si{111} surfaces and the substrate orientation on the underetch rate during anisotropic wet-chemical etching of silicon

(6) Nijdam, A J a Gardeniers, J G E a,c Berenschot, J W a Van Veenendaal, E b Van Suchtelen, J a,b Elwenspoek, M a

a UNIVERSITY OF TWENTE (Netherlands)

b RADBOUD UNIVERSITY NIJMEGEN (Netherlands)

c Kymata Netherlands (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANISOTROPY; POTASSIUM COMPOUNDS; SEMICONDUCTING SILICON; SOLUTIONS; SUBSTRATES; SURFACES;

ANISOTROPIC WET-CHEMICAL ETCHING; ANISOTROPY RATIOS; POTASSIUM HYDROXIDE; UNDERETCH RATE;

ETCHING;

EID: 0035444128 PISSN: 09601317 EISSN: None Source Type: Journal
DOI: 10.1088/0960-1317/11/5/308 Document Type: Article

Times cited : (13)

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