Ultra-deep anisotropic etching of (110) silicon

Journal of Micromechanics and Microengineering

Volumn 9, Issue 1, 1999, Pages 51-57

  Hölke, Alexander ^a   Henderson, H Thurman ^a  

^a University of Cincinnati   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ETCHING; HIGH TEMPERATURE EFFECTS; HIGH TEMPERATURE OPERATIONS; MASKS; OXYGEN; POTASSIUM COMPOUNDS; PRECIPITATION (CHEMICAL); STRESSES;

PATTERN ALIGNMENT; SOLUTION CONCENTRATION; SOLUTION DISSOLVED SILICON; ULTRA DEEP ANISOTROPIC ETCHING; ULTRA DEEP MICROCHANNELS;

SILICON WAFERS;

EID: 0141658407     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/9/1/306     Document Type: Article

References (15)

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