Compensation structures for V-grooves connected to square apertures in KOH-etched (1 0 0) silicon: Theory, simulation and experimentation

Sensors and Actuators, A: Physical

Volumn 112, Issue 2-3, 2004, Pages 328-339

  Wacogne, Bruno ^a   Sadani, Zouaoui ^a   Gharbi, Tijani ^a  

^a FEMTO ST INSTITUTE   (France)

Author keywords

Compensation structure; KOH silicon etching; Micro fluidics; Micro machining

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; ETCHING; MICROBIOLOGY; MICROMACHINING; POTASSIUM COMPOUNDS; SILICON WAFERS;

COMPENSATION STRUCTURES; KOH SILICON ETCHING; MASK DESIGNS; MICRO-FLUIDICS; SQUARE APERTURES;

SILICON;

EID: 2342475191     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2004.01.014     Document Type: Article

References (16)

1. Zubel I. Silicon anisotropic etching in alkaline solutions III: on the possibility of spatial structures forming in the course of Si(1 0 0) anisotropic etching in KOH and KOH + IPA solutions. Sens. Actuators A. 84(1-2):2000;116- 125.
2. Zubel I., Barycka I., Kotowska K., Kramkowska M. Silicon anisotropic etching in alkaline solutions IV: the effect of organic and inorganic agents on silicon anisotropic etching process. Sens. Actuators A. 87(3):2001;163-171.
3. Powell O., Harrison H.B. Anisotropic etching of (1 0 0) and (1 1 0) planes in (1 0 0) silicon. J. Micromech. Microeng. 11:2001;217-220.
4. Zubel I., Kramkowska M. The effect of alcohol additives on etching characteristics in KOH solutions. Sens. Actuators A. 101(3):2002;255-261.
5. Zhang Q., Liu L., Li Z. A new approach to convex corner compensation for anisotropic etching of (1 0 0)Si in KOH. Sens. Actuators A. 56(3):1996;251-254.
6. N. Kaou, J.C. Jeannot, M. de Labachelerie, New method for reduction of corner undercutting in anisotropic KOH etching, and applications to MEMES and MOEMS, SPIE vol. 3680, in: Proceedings of the Symposiun on Design, Test, and Microfab. of MEMS and MOEMS, Paris, France, March-April 1999, pp. 1091-1098.
7. Puers B., Sansen W. Compensation structures for convex corner micro-machining in silicon. Sens. Actuators A. 23(1-3):1990;1036-1041.
8. Bao M., Burrer C., Esteve J., Bausells J., Marco S. Etching front control of 〈1 1 0〉 strips for corner compensation. Sens. Actuators A. 37-38:1993;727-732.
9. van Kampen R.P., Wolffenbuttel R.F. Effects of 〈1 1 0〉-oriented corner compensation structures on membrane quality and convex corner integrity in (1 0 0) silicon using aqueous KOH. J. Micromech. Microeng. 5:1995;91-94.
10. Wu X.P., Ko W.H. Compensating corner undercutting in anisotropic etching of (1 0 0) silicon. Sens. Actuators. 18:1989;207-215.
11. Kim B., Cho D.D. Aqueous KOH etching of silicon (1 1 0). J. Electrochem. Soc. 145:1998;2499-2508.
12. Offereins H.L., Kühl K., Sandmaier H. Methods for the fabrication of convex corners in anisotropic etching of (1 0 0) silicon in aqueous KOH. Sens. Actuators A. 25(1-3):1991;9-13.
13. Mayer G.K., Offereins H.L., Sandmaier H., Kühl K. Fabrication of non-underetched convex corners in anisotropic etching of (1 0 0) silicon in aqueous KOH with respect to novel micromechanic elements. J. Electrochem. Soc. 137:1990;3947-3951.
14. Enoksson P. New structure for corner compensation in anisotropic KOH etching. J. Micromech. Microeng. 7:1997;141-144.
15. Nikpour B., Landsberger L.M., Hubbard T.J., Kahrizi M., Iftimie A. Concave corner compensation between vertical (0 1 0)-(0 0 1) planes anisotropically etched in Si(1 0 0). Sens. Actuators A. 66(1-3):1998;299-307.
16. M. Madou, Fundamentals of Microfabrication, CRC Press, Boca Raton, London, New York, Washington, DC, 1997, p. 563.