A method of TSC analysis of shallow levels applied to silicon

Journal of Physics D: Applied Physics

Volumn 31, Issue 24, 1998, Pages

  Borchi, E ^a   Bruzzi, M ^a   Pirollo, S ^a   Sciortino, S ^a  

^a Dipartimento di Energetica   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; NUMERICAL METHODS; THERMAL EFFECTS;

POOLE-FRENKEL EFFECT; SHALLOW-LEVEL ANALYSIS; THERMALLY STIMULATED CURRENTS (TSC) ANALYSIS;

SEMICONDUCTING SILICON;

EID: 0032305788     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/31/24/002     Document Type: Article

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