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Volumn 372, Issue 3, 1996, Pages 388-398
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Development of transient current and charge techniques for the measurement of effective net concentration of ionized charges (Neff) in the space charge region of p-n junction detectors
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC CURRENTS;
ELECTRIC SPACE CHARGE;
IONIZATION;
SEMICONDUCTING SILICON;
SEMICONDUCTOR JUNCTIONS;
EFFECTIVE NET CONCENTRATION;
IONIZED CHARGES;
SPACE CHARGE REGION (SCR);
TRANSIENT CHARGE TECHNIQUE (TCHT);
TRANSIENT CURRENT TECHNIQUE (TCT);
SILICON SENSORS;
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EID: 0030128607
PISSN: 01689002
EISSN: None
Source Type: Journal
DOI: 10.1016/0168-9002(95)01295-8 Document Type: Article |
Times cited : (167)
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References (18)
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