Development of transient current and charge techniques for the measurement of effective net concentration of ionized charges (Neff) in the space charge region of p-n junction detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 372, Issue 3, 1996, Pages 388-398

  Eremin, V ^a   Strokan, N ^a   Verbitskaya, E ^a   Li, Z ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC SPACE CHARGE; IONIZATION; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

EFFECTIVE NET CONCENTRATION; IONIZED CHARGES; SPACE CHARGE REGION (SCR); TRANSIENT CHARGE TECHNIQUE (TCHT); TRANSIENT CURRENT TECHNIQUE (TCT);

SILICON SENSORS;

EID: 0030128607     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(95)01295-8     Document Type: Article

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