Shallow level analysis in irradiated silicon 1

IEEE Transactions on Nuclear Science

Volumn 47, Issue , 2000, Pages 1474-1477

  Borchi, E ^a,b   Bruzzi, M ^a,b   Li, Z ^c   Pirollo, S ^a,b  

^a Dipartimento di Energetica   (Italy)

^b INFM   (Italy)

^c BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SHALLOW LEVEL CONCENTRATIONS; THERMALLY STIMULATED CURRENT MEASUREMENTS;

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; IRRADIATION; PHOSPHORUS; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

PARTICLE DETECTORS;

EID: 0034244891     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.872999     Document Type: Article

References (15)

1. E. Borchi, M. Bruzzi, Radiation damage in silicon detectors, La Rivista del Nuovo Cimento, vol. 17, 3, 11, 1994.
2. Z. Li, Investigation on the long-term radiation hard of low and medium resistivity starting silicon materials for RT silicon detectors in high energy physics, Nucl. Instrum, & Meth. A, vol. 360, pp. 445-454, 1995.
3. G. Lindstroem, M. Moll, E. Fretwurst, Radiation hardness of silicon detectors - a challenge from high-energy physics, Nucl. Instrum. & Meth. A, vol. 426, pp. 1-15, 1999.
4. E. Borchi, M. Bruzzi, B. Dezillie, S. Lazanu, Z. Li, S. Pirollo, Hall effect analysis in irradiated silicon samples with different resistivities, IEEE Trans. on Nucl. Sci., vol. 46, 4, pp. 834-8, 1999.
5. eff by selective filling of radiation-induced traps at low temperatures, IEEE Trans. on Nucl. Sci., vol. 46, 3, pp. 221-227, 1999.
6. G. D. Watkins and J. W. Corbett, Defects in irradiated silicon: electron paramagnetic resonance and electron-nuclear double resonance of the Si-E center, Phys. Rev., vol. 134, 5A, pp. A1349-A1377, 1964.
7. M. G. Buehler, Impurity centers in pn junctions determined from shifts in the thermally stimulated current and capacitance response with heating rate, Solid. State Electron., vol. 15, pp. 69-79, 1972.
8. D. Lang, Deep-level transient spectroscopy: a new method to characterize traps in semiconductors, Journal Appl. Phys., vol. 45, 7, p. 3023, 1974.
9. L. C. Kimerling, New developments in defect studies in semiconductors, IEEE Trans. on Nucl. Sci., vol. 23, 6, pp. 1497-1505, 1976.
10. E. Borchi, M. Bruzzi, S. Pirollo, S. Sciortino, A method of TSC analysis of shallow levels applied to silicon, J. Phys. D: Appli. Phys., vol. 31, pp. L93-L96, 1998.
11. A. Baldini, M. Bruzzi, Thermally stimulated current spectroscopy: experimental techniques for the investigation of silicon detectors, Rev. Sci. Instrum., vol. 64, 4, pp. 932-936, 1993.
12. +p junction reverse-biased small-signal capacitance, Solid. State Electron., vol. 11, pp. 323, 1968.
13. P. Norton, T. Braggings, H. Levinstein, Recombination of electrons at ionized donors in silicon at low temperatures, Phys. Rev. Lett., vol. 30, pp 488-489, 1973
14. Landolt Bornstein, Semiconductors, vol. 17 a, edited by O. Madelung, M. Sachulz, H. Weiss, Springer-Verlag, p. 47, 1984.
15. J. Matheson, M. Robbins, S. Watts, The effect of radiation induced defects on the performance of the high resistivity silicon diodes, Nucl. Instrum, & Meth. A, vol. 377, pp. 224-227, 1996.