High-gain phototransistors on high-resistivity silicon substrate

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 518, Issue 1-2, 2004, Pages 569-570

  Batignani, G ^a   Bisogni, M G ^a   Boscardin, M ^b   Bosisio, L ^c   Dalla Betta, G F ^d   Del Guerra, A ^a   Dittongo, S ^c   Forti, F ^a   Giorgi, M ^a   Han, D J ^e   Linsalata, S ^a   Marchiori, G ^a   Piemonte, C ^b   Rachevskaia, I ^c   Ronchin, S ^b  

^a UNIVERSITY OF PISA   (Italy)

^b ITC IRST   (Italy)

^c UNIVERSITY OF TRIESTE   (Italy)

^d UNIVERSITY OF TRENTO   (Italy)

^e BEIJING NORMAL UNIVERSITY   (China)

Author keywords

Optoelectronics devices; Particle detectors

Indexed keywords

BORON; CADMIUM; ELECTRIC POTENTIAL; INCANDESCENT LAMPS; IRRADIATION; OPTOELECTRONIC DEVICES; PARTICLE DETECTORS; PHOTONS; SCINTILLATION; SILICON; X RAYS;

HIGH-GAIN PHOTOTRANSISTORS; X RAY IMAGING;

PHOTOTRANSISTORS;

EID: 0942288142     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.11.087     Document Type: Conference Paper

References (4)

1. Han D.J., et al. High Gain Float-Zone Silicon Bipolar Detector. Nucl. Instr. and Meth. A. 512:2003;572.
2. Chen C.Y. Appl. Phys. Lett. 39:1991;340.
3. Sze S.M. Semiconductor Devices: Physics and Technology. 2nd Edition:1999;Wiley, New York. (Chapter 10).
4. Holland S. Nucl. Instr. and Meth. A. 275:1989;537.