Punch through float-zone silicon phototransistors with high linearity and sensitivity

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 547, Issue 2-3, 2005, Pages 437-449

  Sun, C M ^a   Han, D J ^a   Sheng, L Y ^a   Zhang, X R ^a   Zhang, H J ^a   Yang, R ^a   Zhang, L ^b   Ning, B J ^b  

^a BEIJING NORMAL UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

Float zone silicon; Linearity; Phototransistor; Punch through; Silicon detector

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC DISTORTION; GAIN CONTROL; PUNCHING; SENSITIVITY ANALYSIS; SILICON;

FLOAT-ZONE SILICON; LINEARITY; PUNCH THROUGH; SILICON DETECTORS;

PHOTOTRANSISTORS;

EID: 22344444995     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.03.136     Document Type: Article

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