메뉴 건너뛰기




Volumn 548, Issue 3, 2005, Pages 355-363

Characterization of magnetic Czochralski silicon radiation detectors

Author keywords

Magnetic Czochralski; Radiation hardness; Silicon pad

Indexed keywords

CARBON; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; MAGNETIC MATERIALS; OXYGEN; RADIATION HARDENING; SILICON WAFERS;

EID: 23344441351     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.05.001     Document Type: Article
Times cited : (10)

References (13)
  • 2
    • 0035399362 scopus 로고    scopus 로고
    • Radiation hard silicon detectors-developments by the RD48 (ROSE) collaboration
    • Radiation hard silicon detectors-developments by the RD48 (ROSE) collaboration Nucl. Instr. and Meth. A 466 2 2001 308
    • (2001) Nucl. Instr. and Meth. A , vol.466 , Issue.2 , pp. 308
  • 3
    • 0011257238 scopus 로고    scopus 로고
    • Geneva, Switzerland, CERN/LHCC 2000-009, December
    • RD48 3rd Status Rep. CERN, Geneva, Switzerland, CERN/LHCC 2000-009, December 1999.
    • (1999) RD48 3rd Status Rep. CERN
  • 12
    • 23344437847 scopus 로고    scopus 로고
    • Standard practice for conversion between resistivity and dopant density for boron-doped, phosphorous-doped, and arsenic-doped silicon
    • Standard Practice for Conversion Between Resistivity and Dopant Density for Boron-Doped, Phosphorous-Doped, and Arsenic-Doped Silicon, ASTM Designation F723-99.
    • ASTM Designation , vol.F723-99


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.