Spectroscopic observation of the TDD0 in silicon

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 1046-1050

  Murin, L I ^a   Markevich, V P ^a,b   Lindstrom J L ^c   Kleverman, M ^c  

^a INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c LUND UNIVERSITY   (Sweden)

Author keywords

Oxygen; Silicon; Thermal double donors

Indexed keywords

ABSORPTION; ACTIVATION ENERGY; ANNEALING; CRYSTALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIMERS; HALL EFFECT; HEAT TREATMENT; IONIZATION; OXYGEN; PHOTOCONDUCTIVITY; PROBABILITY; SPECTROMETERS;

ELECTRONIC TRANSITIONS; OPTICAL EXCITATION; THERMAL DOUBLE DONORS (TDD);

SILICON;

EID: 0345873452     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.208     Document Type: Conference Paper

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