Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum

Vacuum

Volumn 63, Issue 1-2, 2001, Pages 223-227

  Miczek, M ^a   Adamowicz, B ^a   Szuber, J ^a   Hasegawa, H ^b  

^a SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Capture cross sections; DIGS model; Genetic algorithms; InP surface; Photoluminescence; Surface recombination velocity; Surface states

Indexed keywords

BAND STRUCTURE; CHEMICAL POLISHING; COMPUTER SIMULATION; CONTINUUM MECHANICS; CRYSTAL ORIENTATION; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; GENETIC ALGORITHMS; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY;

SURFACE STATE CONTINUUM;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0035796934     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(01)00195-6     Document Type: Conference Paper

References (19)

1. Properties of indium phosphide