Depth-resolved cathodoluminescence characterization of buried InGaP/GaAs heterointerfaces

Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 508-512

  Ishikawa, Fumitaro ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Cathodoluminescence; Depth resolved; Heterointerface; InGaP; Non destructive

Indexed keywords

CATHODOLUMINESCENCE; ELECTRIC POTENTIAL; HETEROJUNCTIONS; MULTILAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

HETEROINTERFACES;

INTERFACES (MATERIALS);

EID: 0037041993     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00927-8     Document Type: Conference Paper

References (10)