Stress and composition of C-induced Ge dots on Si(100)

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 24, 2003, Pages

  Hadjisavvas, G ^a,b   Sonnet, P ^c   Kelires, P C ^a  

^a UNIVERSITY OF CRETE   (Greece)

^b INSTITUTE OF COMPUTER SCIENCE   (Greece)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; GERMANIUM; SILICON;

ARTICLE; CHEMICAL COMPOSITION; GEOMETRY; NANOTECHNOLOGY; STRESS; SURFACE PROPERTY;

EID: 0042029319     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.241302     Document Type: Article

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