Phosphorus-mediated growth of Ge quantum dots on Si(0 0 1)

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 136-141

  Qin, J ^a   Xue, F ^a   Wang, Y ^a   Bai, L H ^a   Cui, J ^a   Yang, X J ^a   Fan, Y L ^a   Jiang, Z M ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

A1. Low dimensional structures; A3. Molecular beam epitaxy; A3. Quantum dots; B2. Silicon germanium semiconductor

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DOPING (ADDITIVES); MOLECULAR BEAM EPITAXY; PHOSPHORUS; SELF ASSEMBLY; SEMICONDUCTOR MATERIALS; SURFACE ACTIVE AGENTS;

AREAL DENSITY; DOPANTS; LOW DIMENSIONAL STRUCTURES; SILICON GERMANIUM SEMICONDUCTOR;

SEMICONDUCTOR QUANTUM DOTS;

EID: 18444366225     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.106     Document Type: Conference Paper

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