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Volumn 94, Issue 7, 2005, Pages

Two-dimensional carbon incorporation into Si(001): C amount and structure of Si(001)-c(4 × 4)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC STRUCTURE; NEAR-SURFACE SOLUBILITY; SILICON TECHNOLOGY; STRUCTURE MODEL;

EID: 18244363873     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.94.076102     Document Type: Article
Times cited : (26)

References (30)
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    • Taylor, P.A.1
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    • note
    • C, the relative stability is not affected since the number of C atoms is the same in all the considered models.
  • 28
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    • J. Tersoff and D.R. Hamann, Phys. Rev. Lett. 50, 1998 (1983); Phys. Rev. B 31, 805 (1985).
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  • 29
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    • note
    • In contrast to normal Si dimers, RDs would not undergo flip-flop motion at RT as the environment of two atoms in a RD are inequivalent. The RDs buckled in the other way were unstable and relaxed back to the configuration as shown in Fig. 4.
  • 30
    • 18244405713 scopus 로고    scopus 로고
    • note
    • Simulations with DV41-based models show poor agreement with the experimental images.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.