Towards the nanoscale: Influence of scaling on the electronic transport and small-signal behaviour of MOSFETs

Nanotechnology

Volumn 15, Issue 4, 2004, Pages

  Rengel, Raúl ^a   Pardo, Daniel ^a   Martín, María Jesús ^a  

^a UNIVERSITY OF SALAMANCA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARBON NANOTUBES; CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC RESISTANCE; ELECTROSTATICS; MONTE CARLO METHODS; OSCILLATIONS; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE; TRANSISTORS;

ELECTROSTATIC EFFECTS; GATE CONTROL; QUASI-CONSTANT VOLTAGE (QCV); SATURATION CURRENT;

MOSFET DEVICES;

EID: 2342584812     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/15/4/030     Document Type: Conference Paper

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