Development of an analytical mobility model for the simulation of ultra-thin single- and double-gate SOI MOSFETs

Solid-State Electronics

Volumn 48, Issue 4, 2004, Pages 589-595

  Alessandrini, Marco ^a   Esseni, David ^b   Fiegna, Claudio ^a,c  

^a UNIVERSITY OF FERRARA   (Italy)

^b UNIVERSITY OF UDINE   (Italy)

^c ARCES Center   (Italy)

Author keywords

Device simulation; Electrons; Mobility; MOSFET; SOI

Indexed keywords

COMPUTER SIMULATION; ELECTRON MOBILITY; ELECTRON SCATTERING; ELECTROSTATICS; INTERFACES (MATERIALS); SEMICONDUCTOR DOPING; SILICA; SILICON ON INSULATOR TECHNOLOGY; SIMULATORS;

DEVICE SIMULATION; MOBILITY; SOI;

MOSFET DEVICES;

EID: 0442296354     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.09.023     Document Type: Conference Paper

References (16)

1. Choi J.-H., Park Y.-J., Min H.-S. Electron mobility behavior in extremely thin SOI MOSFETs. IEEE Electron. Dev. Lett. 16(11):1995;527-529.
2. Toriumi A, Koga J, Satake H, Ohata A. Performance and reliability concerns of ultra-thin SOI and ultra-thin gate oxide MOSFETs. In: Proceedings IEDM. 1995, p. 847-50.
3. Esseni D., Mastrapasqua M., Celler G., Fiegna C., Selmi L., Sangiorgi E. Low field electron and hole mobility of SOI transistors fabricated on ultra-thin silicon films for deep submicrometer technology application. IEEE Trans. Electron Dev. 48(12):2001;2842-2850.
4. Koga J., Takagi S., Toriumi A. Influence of buried-oxide interface on inversion-layer mobility in ultra-thin SOI MOSFETs. IEEE Trans. Electron Dev. 49:2002;1042-1048.
5. Esseni D., Mastrapasqua M., Fiegna C., Celler G.K., Selmi L., Sangiorgi E. An experimental study of mobility enhancement in ultra-thin SOI transistors operated in double-gate mode. IEEE Trans. Electron Dev. 50(3):2003;802-808.
6. Esseni D, Abramo A, Selmi L, Sangiorgi E. Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs. In: Proceedings IEDM, 2002, p. 719-22.
7. Lombardi C., Manzini S., Saporito A. A physical based mobility model for numerical simulation of nonplanar devices. IEEE Trans. Comput.-Aided Des. 7(11):1988;1164-1171.
8. Darwish M., Lentz J., Pinto M., Zeitzoff P., Krutsick T., Vuong H. An improved electron and hole mobility model for general purpose device simulation. IEEE Trans. Electron Dev. 44(9):1997;1529-1537.
9. Reggiani S, Valdinoci M, Colalongo L, Baccarani, G. A unified analytical model for bulk and surface mobility in Si n- and p-channel MOSFETs. In: ESSDERC, 1999, p. 240-44.
10. Fischetti M., Laux S.E. Monte Carlo study of electron transport in silicon inversion layers. Phys. Rev. 48(4):1993;2244-2274.
11. van Dort P.H.W.M.J., Walker A.J. A simple model for quantization effects in heavily-doped silicon MOSFETs at inversion conditions. Solid-State Electron. 37(3):1994;411-414.
12. Ancona M., Iafrate G. Quantum corrections to the equations of state of an electron gas in a semiconductor. Phys. Rev. B. 39(13):1989;9536-9540.
13. Stern F., Howard W.E. Properties of semiconductor surface inversion layer in the electric quantum limit. Phys. Rev. 163:1967;816-835.
14. ISE TCAD release, 7.5. Part. 16.
15. Klaassen D. A unified mobility model for device simulation, I. Model equations and concentration dependence. Solid-State Electron. 35(7):1992;953-960.
16. Takagi S., Toriumi A., Iwase M., Tango H. On the universality of inversion layer mobility in Si MOSFETs: Part I - Effects of substrate impurity concentration. IEEE Trans. Electron Dev. 41:1994;2357-2362.