Advanced Si1-xGex source/drain and contact technologies for Sub-70 nm CMOS

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 375-378

  Öztürk, Mehmet C ^a   Liu, Jing ^a   Mo, Hongxiang ^a   Pesovic, Nemanja ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; INTEGRATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON ALLOYS;

METAL-SEMICONDUCTOR INTERFACE;

CMOS INTEGRATED CIRCUITS;

EID: 0036923306     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. International Technology Roadmap for Semiconductors, SIA, 2001
2. Yee-Chia Yeo, Vivek Subramanian Jakub Kedzierski, Peiqi Xuan, Tsu-Jae King, Jeffrey Bokor and Chenming Hu, "Design and Fabrication of 50-nm Thin-Body p-MOSFETs With a SiGe Heterostructure Channel," IEEE Transactions on Electron Devices, Vol. 49, NO. 2, pp. 279-286, February 2002
3. Yang-Kyu Choi, Daewon Ha,Tsu-Jae King and Chenming Hu, "Nanoscale Ultrathin Body PMOSFETs With Raised Selective Germanium Source/Drain," IEEE Electron Device Letters, Vol.22, No.9, pp. 447-451, September 2001
4. Tomohisa Mizuno, Naoharu Sugiyama, Tsutomu Tezuka, and Shin-Ichi Takagi, "Novel SOI p-Channel MOSFETs With Higher Strain in Si Channel Using Double SiGe Heterostructures," IEEE Transactions on Electron Devices, Vol. 49, NO. 1, pp. 7-15, January 2002