Ni/Ag metallization for SiGe HBTs using a Ni silicide contact

Semiconductor Science and Technology

Volumn 16, Issue 9, 2001, Pages

  Eberhardt, J ^a   Kasper, E ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE MEASUREMENT; ETCHING; HIGH TEMPERATURE EFFECTS; METALLIZING; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON COMPOUNDS;

CONTACT RESISTANCE; NICKEL SILICIDE;

BIPOLAR TRANSISTORS;

EID: 0035444020     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/9/101     Document Type: Letter

References (5)