Induced damages on CMOS and bipolar integrated structures under focused ion beam irradiation

Microelectronics Reliability

Volumn 38, Issue 6-8, 1998, Pages 901-905

  Benbrik, J ^a   Perdu, P ^a   Benteo, B ^a   Desplats, R ^a   Labat, N ^a   Touboul, A ^a   Danto, Y ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; BIPOLAR INTEGRATED CIRCUITS; BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; FAILURE ANALYSIS; ION BEAMS; LEAKAGE CURRENTS; MOS CAPACITORS; MOSFET DEVICES; RADIATION EFFECTS;

FOCUSED ION BEAMS (FIB);

INTEGRATED CIRCUIT TESTING;

EID: 0032083713     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00136-X     Document Type: Article

References (6)

1. R.G. Lee and J.C Morgan, "Integration of Focused Ion Beam System in a Failure Analysis Environment", Proc. of the 17th Int. Symp. for Testing and Failure Analysis, ISTFA'91, Nov. 1991, pp 85-95
2. Ann N. Campbell, Kenneth A. Peterson, Daniel M. Fleetwood, Jerry M; Soden, "Effect of Focused Ion Beam Irradiation on MOS Transistors", Proc. 35th Annual International Reliability Physics Symposium, IRPS'97, April 1997, pp 72-81
3. K.G. Druijf, J.J.M. de Nijs, E. Van der Drift, "Radiation damage in MOS structures due to plasma processing", Microelectronics Engineering 22, 1993, pp 231-234
4. 2 interface", J. Appl. Phys. 57 (2), 1985, pp 418-425
5. Ann N. Campbell, J.M. Soden, J. Rife, "Electrical Biasing and Voltage Contrast Imaging in a Focused Ion Beam System", Proc. 21th Int. Symp. for Testing and Failure Analysis, ISTFA'95, Nov. 1995, pp 33-41
6. D. J. DiMaria, E. Cartier, D. A. Buchanan « Anode hole injection and trapping in silicon dioxide », J. Appl. Phys. 80 (1), 1996