Formation of a self-aligned hard mask using hydrogen silsesquioxane

Applied Physics Letters

Volumn 88, Issue 15, 2006, Pages

  Im, Kiju ^a   Ahn, Chang Geun ^a   Yang, Jong Heon ^a   Baek, In Bok ^a   Lee, Seongjae ^a   Hwang, Hyunsang ^b   Cho, Won Ju ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COATINGS; DRY ETCHING; MOSFET DEVICES; POLYSILICON; SILICON WAFERS;

HYDROGEN SILSESQUIOXANE (HSQ); SELF-ALIGNED HARD MASK; WAFERS;

MASKS;

EID: 33646130146     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2195012     Document Type: Article

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